| Parameter | Qty./Type | Units |
| RF power | 200 | W |
| RF frequency | 13.56 | MHz |
| Etching gas | SF6 | |
| Etching gas flow rate | 15 | sccm |
| Self-bias voltage | −224 to −93 | V |
| Chamber pressure | 1.5 | mTorr |
| Process duration | 2 to 8 | minutes |